宋文青，1988年出生，博士，讲师，湖南工学院双师型教师。2013年6月毕业于电子科技大学，获电子与通信工程专业硕士学位，同年进入比亚迪股份有限公司担任高级电子工程师。2022年6月获中南大学机械工程专业博士学位。主要研究领域为新型信息器件、半导体光电子器件与集成和半导体材料，研究内容涉及微纳新原理器件制造加工、纳米材料合成和纳米材料形成机制研究及光电功能特性分析。熟悉器件制备工艺，在光刻、掩膜、镀膜、磁控溅射、CVD以及IRE刻蚀方面经验丰富。已在 Journal of Alloys and Compounds、Cryst Eng Comm、IEEE TED、Mechanics of Advanced Materials and Structures和Optics Letters 等期刊累计发表SCI论文15余篇，其中第一作者发表论文6篇。

参与项目：

1、湖南省科技厅面上项目，超宽波段光存储复合忆阻器件的视觉识别与记忆仿生研究，No. 2022JJ30759，2022/01-2024/12，5万元，在研，参与。

2、国家重点研发项目“战略性先进电子材料”重点专项，第三代半导体新型照明材料与器件研究，No.2018YFB0406702，2018/01-2021/12，37.5万元，已结题，参与。

3、湖南省科技厅2018湖湘高层次人才聚集计划创新青年人才项目，宽禁带半导体器件研究，No.2018RS3020，2018/01-2021/12，50万元，已结题，参与。

4、中南大学创新驱动计划项目，宽波段三族氮化物（III-Nitrides)垂直结构金字塔微腔激光器研究，No. 2018CX001，2018/01-2020/12，75 万，已结题，参与。

发表论文：

[1] Wenqing Song, Tao Li, Lei Zhang, Wenhui Zhu*, Liancheng Wang*. Influence of growth parameters on microstructures and electrical properties of In_xAl_1-xN thin films using sputtering [J]. Journal of Alloys and Compounds, 2021, 885: 160977.

[2] Wenqing Song, Tao Li, Lei Zhang, Wenhui Zhu*, Liancheng Wang*. The synthesis and formation mechanism of nonpolar InN nanoplates [J]. Cryst Eng Comm, 2021, 23(35): 5976-5981.

[3] Wenqing Song, Jiawei Si, Shaoteng Wu, Zelin Hu, Linyun Long, Tao Li, Xiang Gao, Lei Zhang, Wenhui Zhu, Liancheng Wang*. Synthesis and morphology evolution of indium nitride (InN) nanotubes and nanobelts by chemical vapor deposition [J]. Cryst Eng Comm, 2019, 21(35), 5356-5362.

[4] Wenqing Song, Xinmiao Li, Ruihua Fang, Lei Zhang*. Memristive Characteristics of the Single-Layer P-Type CuAlO₂ and N-Type ZnO Memristors. Materials. 2022; 15(10), 3637.

[5] Wenqing Song, Xiaobiao Dai, Yingkun He, Tao Li*.The gold nanoparticles enhanced ZnO/GaN UV detector [J]. IEEE Journal of the Electron Devices Socity, 2022, 10, 847-853.

[6] Wenqing Song, Hao Yu, Xinmiao Li, Ruihua Fang, Wenhui Zhu, Lei Zhang*. Electric-Controlled Resistive Switching and Different Synaptic Behaviors in p+-Si/n-ZnO Heterojunction Memristor[J]. IEEE Transactons on electron devices. 2023, 70(4), 1648-1652.

[7] Tao Li, Wenqing Song*, Luay Hashem Abbud & H. Elhosiny Ali. A non-polynomial framework for describing the bending response of a multi-scale composite initially stressed disk [J]. Mechanics of Advanced Materials and Structures, 2022, AHEAD-OF-PRINT, 1-19.

[8] Tao Li, Wenqing Song, Lei, Zhang, Jianchang Yan, Wenhui Zhu, Liancheng Wang*. Self-powered asymmetric metal-semiconductor-metal AlN deep ultraviolet detector [J]. Optics Letters, 2022, 47: 1-4.

[9] Jiawei Si, Wenqing Song, Liancheng Wang, Wenhui Zhu and Lei Zhang*. Influence of Al content on ZnO/Al bilayer-structure ultraviolet photodetector [J]. Semicond. Sci. Technol. 2021, 36: 045008.

[10] Tao Li, Wenqing Song, Rongqiao Wan, Lei, Zhang, Jianchang Yan, Wenhui Zhu*, Liancheng Wang*. 3D-MSM AlN Deep Ultraviolet Detector [J]. IEEE Journal of Quantum Electronics, 2021, 57: 4000107.

[11] Shaoteng Wu, Shaofei Wu, Wenqing Song, Liancheng Wang, Xiaoyan Yi, Zhiqiang Liu, Junxi Wang, Jinmin Li. Crystal phase evolution in kinked GaN nanowires. Nanotechnology, 2020, 31 (14), 145713.

[12] Linyun Long, Tao Li, Zelin Hu, Wenqing Song, Lei Zhang, Liancheng Wang*. Sputtering AlN/In_xAl_1-xN distributed Bragg reflector across the full visible range on Si and SiO₂ substrates [J]. Optics Letters, 2020, 45:6711-6714.

[13] Lingxing Xiong, Lei Zhang, Qipu Lv, Tao Li, Wenqing Song, Jiawei Si, Wenhui Zhu*, Liancheng Wang*. Amorphous gallium oxide (a-Ga₂O₃)-based high-temperature bendable solar-blind ultraviolet photodetector [J]. Semicond. Sci. Technol. 2021, 36: 045010.

[14] Wenhui Zhu*, Jiawei Si, Lei Zhang*, Tao Li, Wenqing Song, Yuting Zhou, Jiahao Yu, Rui Chen, Yexin Feng and Liancheng Wang. Growth of GaN on monolayer hexagonal boron nitride by chemical vapor deposition for ultraviolet photodetectors [J]. Semicond. Sci. Technol. 2020, 35: 125025.

[15] Wenqing Song, Tao Li, Lei Zhang, Wenhui Zhu*, Liancheng Wang*. Study of growth parameters on the well-oriented In_xAl_1-xN using sputtering on Si (100) substrate [C]. The 9th IEEE International Symposium on Next-Generation Electronics (ISNE), 2021.